1999. 11. 30
1/2
SEMICONDUCTOR
TECHNICAL DATA
MMBTA63/64
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 4
GENERAL PURPOSE APPLICATION.
DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
TYPE
MMBTA63
MMBTA64
MARK
AGX
AFX
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
V
(BR)CES
I
C
=-0.1mA, I
B
=0
-30
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=-30V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-10V, I
C
=0
-
-
-0.1
A
DC Current Gain
MMBTA63
h
FE
(1)
I
C
=-10mA, V
CE
=-5V
5,000
-
-
MMBTA64
10,000
-
-
MMBTA63
h
FE
(2)
I
C
=-100mA, V
CE
=-5V
10,000
-
-
MMBTA64
20,000
-
-
Collector-Emitter
Saturation Voltage
MMBTA63/64
V
CE(sat)
I
C
=-100mA, I
B
=-0.1mA
-
-
-1.5
V
Base Emitter
Voltage
MMBTA63/64
V
BE
I
C
=-100mA, V
CE
=-5V
-
-
-2.0
V
Current Gain
Bandwith Product
MMBTA63/64
f
T
I
C
=-10mA, f=100MHz
V
CE
=-5V
125
-
-
MHz
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base
Voltage
MMBTA63/64
V
CBO
-30
V
Collector-Emitter
Voltage
MMBTA63/64
V
CES
-30
V
Emitter-Base Voltage
V
EBO
-10
V
Collector Current
I
C
-500
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
MARK SPEC
Type Name
Marking
Lot No.
A X
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